Analysis of the product and detectivity in a GaInAsSb infrared photovoltaic detector

In this paper a theoretical analysis of the product and the detectivity in a GaInAsSb infrared photovoltaic detector is reported, dependent on the four fundamental kinds of noise mechanism and the quantum efficiency. The considerations are carried out for near room temperature and m wavelength. The analytical results show that the noise mechanisms can be reduced, and correspondingly the performance of such detectors can be improved.