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Analysis of the product and detectivity in a GaInAsSb infrared photovoltaic detector
- Source :
- Journal of Physics D: Applied Physics. 31:3291-3297
- Publication Year :
- 1998
- Publisher :
- IOP Publishing, 1998.
-
Abstract
- In this paper a theoretical analysis of the product and the detectivity in a GaInAsSb infrared photovoltaic detector is reported, dependent on the four fundamental kinds of noise mechanism and the quantum efficiency. The considerations are carried out for near room temperature and m wavelength. The analytical results show that the noise mechanisms can be reduced, and correspondingly the performance of such detectors can be improved.
- Subjects :
- Acoustics and Ultrasonics
Chemistry
business.industry
Infrared
Detector
Photovoltaic system
Condensed Matter Physics
Noise (electronics)
Particle detector
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Wavelength
Product (mathematics)
Optoelectronics
Quantum efficiency
business
Computer Science::Databases
Subjects
Details
- ISSN :
- 13616463 and 00223727
- Volume :
- 31
- Database :
- OpenAIRE
- Journal :
- Journal of Physics D: Applied Physics
- Accession number :
- edsair.doi...........9700d17bf7960df34762b50ee7154d82