The effect of oxygen incorporation on interfacial recombination in GaInP/AlGaInP double heterostructures grown by molecular beam epitaxy using a solid phosphorus valved cell

MLA

Takashi Kuroda, et al. “The Effect of Oxygen Incorporation on Interfacial Recombination in GaInP/AlGaInP Double Heterostructures Grown by Molecular Beam Epitaxy Using a Solid Phosphorus Valved Cell.” Journal of Crystal Growth, May 1999, pp. 1097–100. EBSCOhost, https://doi.org/10.1016/s0022-0248(98)01534-6.

APA

Takashi Kuroda, Fujio Minami, Hideki Gotoh, Satoru Nagao, R Diffily, & Hiroshi Ito. (1999). The effect of oxygen incorporation on interfacial recombination in GaInP/AlGaInP double heterostructures grown by molecular beam epitaxy using a solid phosphorus valved cell. Journal of Crystal Growth, 1097–1100. https://doi.org/10.1016/s0022-0248(98)01534-6

Chicago

Takashi Kuroda, Fujio Minami, Hideki Gotoh, Satoru Nagao, R Diffily, and Hiroshi Ito. 1999. “The Effect of Oxygen Incorporation on Interfacial Recombination in GaInP/AlGaInP Double Heterostructures Grown by Molecular Beam Epitaxy Using a Solid Phosphorus Valved Cell.” Journal of Crystal Growth, May, 1097–1100. doi:10.1016/s0022-0248(98)01534-6.