Growth of Ba-hexaferrite films on single crystal 6-H SiC

Barium hexaferrite films have been processed by pulsed laser deposition on single crystal 6-H silicon carbide substrates. Atomic force microscopy images show hexagonal crystals (∼0.5 μm in diameter) oriented with the c-axis perpendicular to the film plane. X-ray θ–2θ diffraction measurements indicate a strong ( 0 , 0 , 2 n ) alignment of crystallites. The magnetization for low-pressure deposition (20 mTorr) is comparable to bulk values (4πMs∼4320 G). The loop squareness, important for self-bias microwave device applications, increases with oxygen pressure reaching a maximum value of 70%. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of μ-wave and mm-wave monolithic integrated circuits.