Laser produced plasma light source development for HVM

This paper describes the development of a laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193nm immersion double patterning technology for sub- 20nm critical layer patterning. In this paper we discuss the most recent results from high power testing on our development systems targeted at the 250W configuration, and describe the requirements and technical challenges related to successful implementation of these technologies. Subsystem performance will be shown including Conversion Efficiency (CE), dose control, collector protection and out-of-band (OOB) radiation measurements. This presentation reviews the experimental results obtained on systems with a focus on the topics most critical for a 250W HVM LPP source.