Quantum efficiency measurement of subcells in multi-junction solar cells based on III-V/Si

The work is devoted to development of the post-growth technology for direct study of the top subcell based on p-i-n junction with the GaPAs i-layer in the double-junction solar cell grown on silicon wafer. It allowed to more precisely measure quantum efficiency (QE) of the top subcell without additional IR-illumination for saturation of the bottom subcell in wafer. In result, measured QE of mesa-structure shows more reliable results without artefacts in spectra.