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Ultra-low noise and exceptional uniformity of SensL C-series SiPM sensors

Authors :
Liam Wall
Carl Jackson
D. Herbert
Brian McGarvey
Kevin O'Neill
Source :
SPIE Proceedings.
Publication Year :
2015
Publisher :
SPIE, 2015.

Abstract

SensL C-Series Silicon Photomultiplier (SiPM) sensors are fabricated in a high-volume CMOS foundry to a custom SensL process, and packaged as a reflow solderable surface mount device. Advances in SiPM production have resulted in significant improvement in PDE, dark current as well as tighter breakdown voltage uniformity for the C-Series SiPM sensors. The SiPM are fabricated with a shallow P-on-N junction optimized for the detection of shorter wavelength photons, with a peak PDE of 41% at 420nm and excellent sensitivity extending to wavelengths

Details

ISSN :
0277786X
Database :
OpenAIRE
Journal :
SPIE Proceedings
Accession number :
edsair.doi...........9631027292075c7130d86e6be0d021a0
Full Text :
https://doi.org/10.1117/12.2076898