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Reconfigurable MoS2 Memtransistors for Continuous Learning in Spiking Neural Networks

Authors :
Silu Guo
William A. Gaviria Rojas
Mark C. Hersam
Hadallia Bergeron
Stephanie E. Liu
Shamma Nasrin
Ahish Shylendra
Hong Sub Lee
Amit Ranjan Trivedi
Shaowei Li
Jiangtan Yuan
Vinod K. Sangwan
Source :
Nano Letters. 21:6432-6440
Publication Year :
2021
Publisher :
American Chemical Society (ACS), 2021.

Abstract

Artificial intelligence and machine learning are growing computing paradigms, but current algorithms incur undesirable energy costs on conventional hardware platforms, thus motivating the exploration of more efficient neuromorphic architectures. Toward this end, we introduce here a memtransistor with gate-tunable dynamic learning behavior. By fabricating memtransistors from monolayer MoS2 grown on sapphire, the relative importance of the vertical field effect from the gate is enhanced, thereby heightening reconfigurability of the device response. Inspired by biological systems, gate pulses are used to modulate potentiation and depression, resulting in diverse learning curves and simplified spike-timing-dependent plasticity that facilitate unsupervised learning in simulated spiking neural networks. This capability also enables continuous learning, which is a previously underexplored cognitive concept in neuromorphic computing. Overall, this work demonstrates that the reconfigurability of memtransistors provides unique hardware accelerator opportunities for energy efficient artificial intelligence and machine learning.

Details

ISSN :
15306992 and 15306984
Volume :
21
Database :
OpenAIRE
Journal :
Nano Letters
Accession number :
edsair.doi...........9622b4f9be663aa8adb7ea5bc8697151
Full Text :
https://doi.org/10.1021/acs.nanolett.1c00982