The effects of the touch voltage and hydrostatic pressure on the optical absorption of Delta-MIGFET transistor

The combined effects of hydrostatic pressure and voltage contact on subband structure and optical transitions in GaAs delta-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor) have been theoretically studied. Results obtained show the optical absorption is quite sensitive to the applied hydrostatic pressure and contact voltage. These can be suitable for good optical performance and various infrared optical device applications and can be easily obtained by tuning the voltage contact and hydrostatic pressure strength.