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Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

Authors :
Daniel S. Engstrøm
Magnus T. Borgström
Peter Bøggild
Christian Kallesøe
Kristian Mølhave
Kasper F. Larsen
Lars Samuelson
Thomas Mårtensson
Torben Mikael Hansen
Source :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:21-26
Publication Year :
2010
Publisher :
American Vacuum Society, 2010.

Abstract

Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections simultaneously on multiple nanowires. They investigate the potential of combining nanostencil deposition of catalyst, epitaxial III-V heterostructure nanowire growth, and selective etching, as a road toward wafer scale integration and engineering of nanowires with existing silicon technology. Nanostencil lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III-V native oxides. Depending on the etching conditions, a variety of gap topologies and tiplike structures are observed, offering postgrowth engineering of material composition and morphology.

Details

ISSN :
21662754 and 21662746
Volume :
28
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Accession number :
edsair.doi...........955c2ae9ebb30646717d89c013447bfc
Full Text :
https://doi.org/10.1116/1.3268135