Promotion of metallurgical reactions at the Ni-SiC interface by irradiation with protons

It is shown that irradiation of Ni-SiC structures with protons at elevated temperatures promotes metallurgical reactions at the Ni-SiC interface owing to a diffusion mechanism stimulated by the generation of radiation defects. The most pronounced effect of mixing at the metal-semiconductor interface is observed if the thickness of the metal film is equal to the projected range of protons.