100W C-band GaN solid state power amplifier with 50% PAE for satellite use

100W C-band gallium nitride solid state power amplifier (GaN SSPA) was developed for satellite use. GaN SSPA has already been applied to various fields such as ground stations and radar systems. Mitsubishi Electric TOKKI Systems (MELOS) had succeeded in developing 150W S-band GaN SSPA and 70W C-band GaN SSPA for satellite use in the past. Based on these development results of the GaN SSPA, MELOS further developed a 100W C-Band GaN SSPA with power added efficiency (PAE) of 50%. In order to achieve higher power and efficiency, MELOS selected a new GaN device and optimized the matching circuit and improved the efficiency of electrical power conditioner (EPC). Furthermore, MELOS adopted MMICs in the RF Low Power Section and optimized the chassis to reduce size. Development result showed that, together with EPC, the GaN SSPA achieved an output power of 119.3W max with PAE of 53.4% max. The mass was 1.45 kg and environment tests at QT level proved that the GaN SSPA is applicable to space use. To the best of our knowledge, the GaN SSPA in this study achieves the highest PAE of C-band GaN SSPA ever reported over 100 W output power. MELOS will continue to pursue further its potential capabilities.