Characterization of Nano-Floating Gate Memory with ZnO Nanoparticles Embedded in Polymeric Matrix

Metal oxide nanoparticles are embedded in a polyimide matrix by a chemical reaction between a metal thin film and polyamic acid. The electrical characteristics of ZnO nanoparticles are investigated with a floating gate capacitor structure by capacitance–voltage (C–V) measurement. The C–V characteristics resulting from metal deposition modulation and the existence of a SiO2 layer are also investigated. As a result, ZnO particles with a SiO2 tunneling barrier show a C–V hysteresis voltage gap of 2.8 V at 300 K. ZnO particles directly located on a Si substrate show a C–V hysteresis width of 1.5 V at 80 K. This electrical characterization is discussed for applications to nano floating-gate memory devices.