A-BCD: An economic 100 V RESURF silicon-on-insulator BCD technology for consumer and automotive applications

Authors :: R. van Huizen
J.J. Koning
Raymond J. E. Hueting
H. Schligtenhorst
H.G.A. Huizing
J.A. van der Pol
G.J.J. Hessels
B. van Velzen
F. van den Elshout
J.H.H.A. Egbers
E.F. Hooghoudt
A.W. Ludikhuize
J.F. Mom
G. van Lijnschoten
Maarten Jacobus Swanenberg
J. Soeteman
Source :: 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: A-BCD is a family of 100 V BCD processes on SOI offering latchup free operation, improved robustness, superior EMC performance, higher packing density, lower mask count, high temperature and higher frequency operation and easier design over bulk silicon technology. A wide range of a passive and active (5/12/25/60 and 100 V) devices are available. Device design tradeoffs for n- and p-type LDMOS and extended drain PMOS are discussed in detail. This and the low mask count makes it a versatile process for cost-sensitive consumer and automotive markets.

Subjects :: LDMOS
Engineering
Silicon
business.industry
Electrical engineering
Automotive industry
chemistry.chemical_element
Silicon on insulator
High voltage
Automotive electronics
PMOS logic
CMOS
chemistry
business

Database :: OpenAIRE
Journal :: 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
Accession number :: edsair.doi...........949b6f87356b657457428b1a1f9ef606
Full Text :: https://doi.org/10.1109/ispsd.2000.856836

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