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Resonant tunneling in ZnSe/BeTe double-barrier structures

Authors :
G. Landwehr
F. Fischer
U. Lunz
Andreas Waag
M. Keim
Source :
Journal of Crystal Growth. :806-809
Publication Year :
1998
Publisher :
Elsevier BV, 1998.

Abstract

In this contribution we report on resonant tunneling in ZnSe/BeTe double-barrier structures. Vertical transport across the resonant-tunneling structure has been analyzed in detail as a function of temperature and applied magnetic field.

Subjects

Subjects :
Condensed matter physics
Chemistry
Semiconductor materials
Function (mathematics)
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Double barrier
Magnetic field
Inorganic Chemistry
Charge-carrier density
Condensed Matter::Superconductivity
Materials Chemistry
Voltage drop
Quantum tunnelling

Details

ISSN :
00220248
Database :
OpenAIRE
Journal :
Journal of Crystal Growth
Accession number :
edsair.doi...........93f63f9c02b938cc07d0656441f03aa2

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