Growth of 4H-polytype silicon carbide ingots on (10 % MathType!MTEF!2!1!+- % feaagaart1ev2aaatCvAUfKttLearuqr1ngBPrgarmWu51MyVXguY9 % gCGievaerbd9wDYLwzYbWexLMBbXgBcf2CPn2qVrwzqf2zLnharyav % P1wzZbItLDhis9wBH5garqqtubsr4rNCHbGeaGqiVu0Je9sqqrpepC % 0xbbL8F4rqqrFfpeea0xe9Lq-Jc9vqaqpepm0xbba9pwe9Q8fs0-yq % aqpepae9pg0FirpepeKkFr0xfr-xfr-xb9adbaqaaeGaciGaaiaabe % qaamaaeaqbaaGcbaGafGymaeJbaebaaaa!3CDF! $$ \bar 1 $$ 0) seeds

The growth of 4 H-polytype silicon carbide ingots by the modified Lely method on (10 $$ \bar 1 $$ 0) seeds has been investigated. It is shown that this seed plane allows intense ingot outgrowth. Single-crystal ingots up to 60 mm in diameter can be obtained at growth rates below 0.6 mm/h. Investigation of the defect structure showed that the grown ingots are practically micropipe-free but contain stacking faults and carbon inclusions.