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P-type thin films transistors with solution-deposited lead sulfide films as semiconductor
- Source :
- Thin Solid Films. 520:3107-3110
- Publication Year :
- 2012
- Publisher :
- Elsevier BV, 2012.
-
Abstract
- In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was ~ 0.09 cm2 V− 1 s− 1 whereas the mobility for devices annealed at 150 °C/h in forming gas increased up to ~ 0.14 cm2 V− 1 s− 1. Besides the thermal annealing, the entire fabrications process was maintained below 100 °C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 °C anneal as well as a function of the PbS active layer thicknesses.
- Subjects :
- Materials science
business.industry
Scanning electron microscope
Metals and Alloys
Field effect
Nanotechnology
Surfaces and Interfaces
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Semiconductor
chemistry
Thin-film transistor
Materials Chemistry
Optoelectronics
Lead sulfide
Thin film
business
Forming gas
Chemical bath deposition
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 520
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........9326301318fca3ae3e5f8f03e83d5db5