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Impact of Channel Flattening Process on Device Performance of Ge nMOSFETs with Different Surface Orientations

Authors :
N. Uchida
W. Mizubayashi
Wen-Hsin Chang
T. Maeda
H. Ishii
T. Irisawa
Source :
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Publication Year :
2019
Publisher :
The Japan Society of Applied Physics, 2019.

Subjects

Subjects :
Surface (mathematics)
Materials science
business.industry
Process (computing)
Optoelectronics
business
Flattening
Communication channel

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........92e617fd67bad95b382349fd690480bb
Full Text :
https://doi.org/10.7567/ssdm.2019.n-2-03
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