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High-Voltage Regrown Nonpolar <tex-math notation='LaTeX'>${m}$ </tex-math> -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches
- Source :
- IEEE Electron Device Letters. 40:387-390
- Publication Year :
- 2019
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2019.
-
Abstract
- We report high-voltage regrown nonpolar ${m}$ -plane p-n diodes on freestanding GaN substrates. A high blocking voltage of 540 V at ~1 mA/cm $^{\textsf {2}}$ (corresponding to an electric field of E ~ 3.35 MV/cm), turn- ON voltages between 2.9 and 3.1 V, specific on-resistance of 1.7 $\text{m}\Omega \cdot \textsf {cm}^{\textsf {2}}$ at 300 A/cm $^{\textsf {2}}$ , and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O, and C interfacial impurity levels up to $\textsf {2}\times \textsf {10}^{\textsf {17}}$ cm $^{-\textsf {3}}$ , $\textsf {8}\times \textsf {10}^{\textsf {17}}$ cm $^{-\textsf {3}}$ , and $\textsf {1}\times \textsf {10}^{\textsf {19}}$ cm $^{-\textsf {3}}$ , respectively, at the metallurgical junction of ${m}$ -plane, p-n diodes do not result in very early breakdown in the reverse bias although the off-state leakage current in the forward bias is affected. The impact of the growth interruption/regrowth on diode performance is also investigated.
- Subjects :
- 010302 applied physics
Physics
Doping
Schottky diode
Gallium nitride
01 natural sciences
Omega
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
Impurity
Electric field
0103 physical sciences
Turn (geometry)
Electrical and Electronic Engineering
Atomic physics
Diode
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 40
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........92df31d04ad4b4e34afe8f6563b936ba