The investigations of InAs quantum dots overgrown on In 0.1 Ga 0.9 As surfactant layer and 10° off-angle (100) GaAs substrate

For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the In x Ga 1-x As relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In 0.1 Ga 0.9 As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.