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Structural properties of (Ga,Mn)Sb thin films on GaAs(111)A substrate

Authors :
Elżbieta Dynowska
W. Caliebe
J. Z. Domagala
P. Romanowski
Tomasz Wojciechowski
Jadwiga Bak-Misiuk
Janusz Sadowski
Source :
physica status solidi c. 6:2792-2794
Publication Year :
2009
Publisher :
Wiley, 2009.

Abstract

GaSb/GaAs(111)A layers with embedded Mn(Ga)Sb clusters have been grown by molecular beam epitaxy method at the substrate temperature of 450 °C. The results of structural characterization of (Ga,Mn)Sb with Mn concentration up to 8% are presented. Almost all Mn atoms introduced into the GaSb layers form hexagonal Mn(Ga)Sb clusters. Large hexagonal clusters with various shape and dimensions were detected by scanning electron microscopy. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Details

ISSN :
16101642 and 18626351
Volume :
6
Database :
OpenAIRE
Journal :
physica status solidi c
Accession number :
edsair.doi...........92a4fd08892c5c22dc4a21d2a7b3df86
Full Text :
https://doi.org/10.1002/pssc.200982568