Back to Search
Start Over
Growth and characterization of an Al-doped GaSe crystal
- Source :
- Journal of Crystal Growth. 483:318-322
- Publication Year :
- 2018
- Publisher :
- Elsevier BV, 2018.
-
Abstract
- A GaSe: Al (0.13 wt%) single crystal was grown using the Bridgman method combined with a crucible rotation technique. A 35 × 19×5.5 mm 3 sample was cut from the as-grown crystal ingot. The GaSe: Al (0.13 wt%) crystal has an indentation hardness of 2.27 GPa, which is 2.6 times harder than the pure GaSe crystal. In particular, a sample with a thickness of 5.5 mm has an infrared transmission of approximately 60%. The absorption coefficient of this sample is as low as 0.1 cm −1 over the range of 0.83 to −14 μm, which demonstrates its high optical quality. A crystal growth method with the described procedures may be suitable to grow other doped GaSe crystals.
- Subjects :
- Materials science
Doping
Analytical chemistry
Crystal growth
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Indentation hardness
010309 optics
Inorganic Chemistry
Crystal
Crystallography
Attenuation coefficient
0103 physical sciences
Materials Chemistry
Ingot
0210 nano-technology
Single crystal
Seed crystal
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 483
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........92822f50499d7ba7eb95e4d54b8437c6