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Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
- Source :
- Technical Physics. 66:367-367
- Publication Year :
- 2021
- Publisher :
- Pleiades Publishing Ltd, 2021.
- Subjects :
- Physics and Astronomy (miscellaneous)
Subjects
Details
- ISSN :
- 10906525 and 10637842
- Volume :
- 66
- Database :
- OpenAIRE
- Journal :
- Technical Physics
- Accession number :
- edsair.doi...........925d970f89cf42489b79f4a85af5d9a1
- Full Text :
- https://doi.org/10.1134/s106378422102016x