Characterisation of 3D‐GaN/InGaN core‐shell nanostructures by transmission electron microscopy

Transmission and scanning electron microscopy have been used to characterise GaN/InGaN 3D nanostructures grown on patterned GaN/sapphire substrates by metal organic vapour phase epitaxy (MOVPE). It has been found that the growth of well ordered arrays of such nanostructures, containing multiple quantum wells on non-polar side-facets, can be achieved with a low density of defects. Growth changes and surface morphology play a major role in the nucleation of any defects present. The nanostructure morphology has been investigated and differing growth rates on adjacent facets studied. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)