Electromagnetic propagation in multilayered nanomodified heavily doped Si:P systems

Investigation of some light-matter interactions in Multi-Interface Novel Devices (MIND) containing a nanoscale Si-layered system have led to a method for predicting free-carrier density dependent nonlinear optical properties as a function of doping, light excitation intensity and carrier injection. The approach is based on the well-known t-matrix approximation. A simplified a few-layer optical model has been constructed that will reproduce the main features/parameters of real systems. The degree of model and simulation self-consistency is discussed using basic physical functions and published experimental data. Near perfect agreement between the simulated model and the corresponding experimental results has been obtained. In this way, the simulation allowed us to determine the main origins/components of the strong optical nonlinearity characteristic of one of the most specific MIND behaviours.