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Highly Stable, Low Noise Millimeter-Wave IMPATT Oscillator (Technical Notes)

Authors :
K. Miyazawa
S. Kodaira
M. Ikeda
H. Okamoto
Source :
IEEE Transactions on Microwave Theory and Techniques. 26:627-628
Publication Year :
1978
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 1978.

Abstract

A highly stable and low noise IMPATT oscillator at 75 GHz is realized by using the parametric injection locking technique along with an AFC circuit in which a crystal oscillator is used as a reference. Noise level of this oscillator is lower by 25 dB as compared with that of the free-running IMPATT oscillator and the frequency stability is as good as 10/sup -8/ / /spl deg/C.

Details

ISSN :
00189480
Volume :
26
Database :
OpenAIRE
Journal :
IEEE Transactions on Microwave Theory and Techniques
Accession number :
edsair.doi...........922467022a5fd880cdba65fe0eeb7ed5