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Characteristics improvement and carrier transportation of CeO/sub 2/ gate dielectrics with rapid thermal annealing
- Source :
- Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).
- Publication Year :
- 2004
- Publisher :
- IEEE, 2004.
-
Abstract
- In this paper, we have investigated the properties and carrier transportation of ultra-thin cerium dioxide films with rapid thermal annealing. Improved characteristics such as low leakage current, high breakdown voltage and large time-dependent-dielectric-breakdown (TDDB) are obtained owing to the more stoichiometric quality of the CeO/sub 2/ films after high temperature annealing. Moreover, temperature dependence of gate leakage current under substrate injection is studied, and the carrier conduction mechanisms, including the Frenkel-Poole (F-P) conduction and the Fowler-Nordheim (F-N) tunneling are also proposed, from which we have deduced the energy band diagram of Al/CeO/sub 2//n-Si structure for the first time.
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743)
- Accession number :
- edsair.doi...........91e967bde79d5c4d851e86b4769fdc58