Theory of direct frequency modulation of semiconductor lasers with integrated external cavity

Numerical calculations of the frequency modulation responses of monolithically integrated external-cavity semiconductor lasers are performed using G.P. Agrawal's (J. Appl. Phys., vol.56, p.3110-15, 1984) two-section model. Theoretical results show good agreement with the reported experimental results. The comparison of the modulation responses of the solitary semiconductor laser diodes, the conventional external-cavity semiconductor lasers, and the integrated passive external-cavity semiconductor lasers demonstrates that the integrated external-cavity semiconductor laser is the best choice for use in direct frequency modulation. >