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A rigorous theoretical analysis for an In0.53Ga0.47As/InP single photon avalanche photodiode under Geiger mode operation
- Source :
- Journal of Physics D: Applied Physics. 41:155101
- Publication Year :
- 2008
- Publisher :
- IOP Publishing, 2008.
-
Abstract
- A rigorous theoretical model for In0.53Ga0.47As/InP single photon avalanche photodiodes operated in the Geiger mode is developed to calculate dark count probabilities over a wide range of temperatures and widths of multiplication layer. Both nonlocal ionization and low field impact ionization in the absorption layer are considered in this model. The calculated results confirm that impact ionization in the absorption and charge layers increases the dark count probability. The primary mechanism of dark counts depends on both device structure and operating conditions. For a 1 µm multiplication width, the dominant mechanism of the dark counts at a temperature above 233 K is the generation–recombination in the absorber while at a temperature below 233 K the tunnelling effect in the multiplication layer begins to dominate.
- Subjects :
- Physics
Photon
Acoustics and Ultrasonics
business.industry
Condensed Matter Physics
Avalanche photodiode
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Tunnel effect
Impact ionization
Optics
law
Ionization
Field desorption
Geiger counter
Atomic physics
business
Absorption (electromagnetic radiation)
Subjects
Details
- ISSN :
- 13616463 and 00223727
- Volume :
- 41
- Database :
- OpenAIRE
- Journal :
- Journal of Physics D: Applied Physics
- Accession number :
- edsair.doi...........9188d2b14b739d9f15c150fad6adfb74