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An average-bond-energy method used for band-offset calculation for a strained heterojunction

An average-bond-energy method used for band-offset calculation for a strained heterojunction

Authors :
Guo-Min He
Yong-Mei Zheng
Ren-Zhi Wang
Shu-Hui Cai
Shu-Ping Li
Source :
Journal of Physics: Condensed Matter. 12:7759-7770
Publication Year :
2000
Publisher :
IOP Publishing, 2000.

Abstract

We have extended the average-bond-energy method to study the strained-heterojunction band offset. Through a detailed study of the effect of hydrostatic and uniaxial strains on the energy of the average valence band edge Ev.av relative to the average bond energy, we find that Ev.av remains basically unchanged under different strain conditions, and that the deformation potential av.av corresponding to Ev.av is much smaller than the av for other analogous methods. Thus, in the average-bond-energy method, the valence band offset ?Ev can be obtained neglecting av.av. It is only necessary to calculate the valence band maximum energy relative to the average bond energy before the strain and to use the experimental values of the deformation potential b and spin-orbit splitting ?0 to determine the splitting value for the valence band. It is not necessary to calculate the band structures under various strain conditions. This simplified calculation method involves only a small calculational burden; therefore, it can conveniently be used to predict the strained-heterojunction band offset.

Details

ISSN :
1361648X and 09538984
Volume :
12
Database :
OpenAIRE
Journal :
Journal of Physics: Condensed Matter
Accession number :
edsair.doi...........9182a06ee48f7c77efdba4ea45d47020
Full Text :
https://doi.org/10.1088/0953-8984/12/35/311