Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD

This contribution presents results on achievable growth temperatures and growth rates as a function of reactor pressure for the growth of InN by high-pressure chemical vapour deposition (HPCVD). The InN epilayers were grown at reactor pressures ranging from atmospheric pressure to 19 bar. The results show that the InN growth temperature increased linearly with the reactor pressure from 759 °C to 876 °C. The growth rate decreases from 127 nm/h to 20 nm/h as the reactor pressure is increased from 1 bar to 19 bar. The structural, optical, and electrical properties of the epitaxial layers were analyzed by X-ray diffraction, Raman spectroscopy, IR reflection spectroscopy, and optical transmission spectroscopy. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)