Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filaments

MLA

D.M. Goldie, et al. “Depth Profiling and the Effect of Oxygen and Carbon on the Photoelectrical Properties of Amorphous Silicon Films Deposited Using Tungsten Wire Filaments.” Thin Solid Films, vol. 395, Sept. 2001, pp. 130–33. EBSCOhost, https://doi.org/10.1016/s0040-6090(01)01233-0.

APA

D.M. Goldie, Steve Reynolds, David J. Keeble, S. Anthony, R.A. Gibson, Saydulla Persheyev, K Robb, I. Zrinscak, Charlie Main, & Mervyn Rose. (2001). Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filaments. Thin Solid Films, 395, 130–133. https://doi.org/10.1016/s0040-6090(01)01233-0

Chicago

D.M. Goldie, Steve Reynolds, David J. Keeble, S. Anthony, R.A. Gibson, Saydulla Persheyev, K Robb, I. Zrinscak, Charlie Main, and Mervyn Rose. 2001. “Depth Profiling and the Effect of Oxygen and Carbon on the Photoelectrical Properties of Amorphous Silicon Films Deposited Using Tungsten Wire Filaments.” Thin Solid Films 395 (September): 130–33. doi:10.1016/s0040-6090(01)01233-0.