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Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filaments
- Source :
- Thin Solid Films. 395:130-133
- Publication Year :
- 2001
- Publisher :
- Elsevier BV, 2001.
-
Abstract
- Infrared spectroscopic data are correlated here together with conductivity results, transient photoconductivity measurements and fundamental absorption data in an attempt to understand the physical processes involved in the growth of tungsten hot-wire deposited hydrogenated amorphous silicon. Film surface growth processes initially involve diffusing thermally dissociated radicals, with a subsequent additional contribution from evaporated silicon species. We show how changing processes at the heated wire surface, surrounded by silane gas, affect the electronic and structural properties of the hydrogenated amorphous silicon produced. Depth profiling by chemical etching reveals substantial variations in the level of contamination and in the electronic structure throughout the film.
- Subjects :
- Amorphous silicon
Materials science
Silicon
Photoconductivity
Metals and Alloys
Nanocrystalline silicon
chemistry.chemical_element
Surfaces and Interfaces
Tungsten
Silane
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Amorphous carbon
chemistry
Chemical engineering
Materials Chemistry
Thin film
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 395
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........9168d6a1e0849c9e4840a2f02fbb6ae5
- Full Text :
- https://doi.org/10.1016/s0040-6090(01)01233-0