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Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filaments

Authors :
D.M. Goldie
Steve Reynolds
David J. Keeble
S. Anthony
R.A. Gibson
Saydulla Persheyev
K Robb
I. Zrinscak
Charlie Main
Mervyn Rose
Source :
Thin Solid Films. 395:130-133
Publication Year :
2001
Publisher :
Elsevier BV, 2001.

Abstract

Infrared spectroscopic data are correlated here together with conductivity results, transient photoconductivity measurements and fundamental absorption data in an attempt to understand the physical processes involved in the growth of tungsten hot-wire deposited hydrogenated amorphous silicon. Film surface growth processes initially involve diffusing thermally dissociated radicals, with a subsequent additional contribution from evaporated silicon species. We show how changing processes at the heated wire surface, surrounded by silane gas, affect the electronic and structural properties of the hydrogenated amorphous silicon produced. Depth profiling by chemical etching reveals substantial variations in the level of contamination and in the electronic structure throughout the film.

Details

ISSN :
00406090
Volume :
395
Database :
OpenAIRE
Journal :
Thin Solid Films
Accession number :
edsair.doi...........9168d6a1e0849c9e4840a2f02fbb6ae5
Full Text :
https://doi.org/10.1016/s0040-6090(01)01233-0