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InP/InGaAs heterojunction phototransistors
- Source :
- IEEE Journal of Quantum Electronics. 17:264-269
- Publication Year :
- 1981
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1981.
-
Abstract
- We describe the fabrication and device characteristics of experimental back-illuminated InP/InGaAs n-p-n heterojunction phototransistors. These devices exhibit photoresponse in the wavelength range of 0.95-1.6 \mu m. An optical gain of 40 at an input power of 1 nW (an improvement of 1000 in sensitivity over previously reported phototransistors) has been observed. Gains as high as 1000 have been achieved for higher incident power levels.
Details
- ISSN :
- 00189197
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Quantum Electronics
- Accession number :
- edsair.doi...........915a61c55e2793312c0b220ab95e835e
- Full Text :
- https://doi.org/10.1109/jqe.1981.1071072