Impact of electrolyte deposition technique on resistive Pt/Ta2O5/Cu switch performance

Resistive memory is being considered for next-generation non-volatile memory due to the inherent simplicity, scalability and low cost [1, 2]. Additionally, these devices show potential to replace static random access memory (SRAM) as high performance switches for reconfigurable devices [3, 4]. These devices operate by changing resistance from high (Roff) to low (Ron) values in response to applied voltage due to the formation and rupture of a metal filament as shown in Figure 1.