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Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors
- Source :
- ACS Applied Materials & Interfaces. 12:5031-5039
- Publication Year :
- 2019
- Publisher :
- American Chemical Society (ACS), 2019.
-
Abstract
- Two-dimensional transition metal dichalcogenides (TMDCs) have emerged as promising materials for next-generation electronics due to their excellent semiconducting properties. However, high contact ...
- Subjects :
- 010302 applied physics
Materials science
business.industry
Interface (computing)
Contact resistance
Transistor
chemistry.chemical_element
02 engineering and technology
Zinc
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
chemistry.chemical_compound
Transition metal
chemistry
law
0103 physical sciences
Optoelectronics
General Materials Science
Electronics
0210 nano-technology
business
Molybdenum disulfide
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 12
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi...........91446b9b66c7731aba39c5a853106a70