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Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs
- Source :
- The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society.
- Publication Year :
- 2003
- Publisher :
- IEEE, 2003.
-
Abstract
- We demonstrate continuous wave operation of MOCVD-grown 1.55 /spl mu/m buried tunnel junction VCSELs at room temperature. This buried tunnel junction VCSEL structure is prepared by MOCVD twofold epitaxial growth. The threshold current and emission wavelength for a 10 /spl mu/m-diameter device are 3.5 mA and 1552 nm, respectively.
Details
- Database :
- OpenAIRE
- Journal :
- The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society
- Accession number :
- edsair.doi...........90d7a5a9bd1dbe7942f26193897f829b
- Full Text :
- https://doi.org/10.1109/leos.2002.1159495