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Continuous wave operation of MOCVD grown 1.55 μm buried tunnel junction VCSELs

Authors :
Young-Gu Ju
Won Seok Han
Jae Hyun Kim
Oh Kee Kwon
B.-S. Yoo
Hyun-Woo Song
Jae-Heon Shin
Source :
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society.
Publication Year :
2003
Publisher :
IEEE, 2003.

Abstract

We demonstrate continuous wave operation of MOCVD-grown 1.55 /spl mu/m buried tunnel junction VCSELs at room temperature. This buried tunnel junction VCSEL structure is prepared by MOCVD twofold epitaxial growth. The threshold current and emission wavelength for a 10 /spl mu/m-diameter device are 3.5 mA and 1552 nm, respectively.

Details

Database :
OpenAIRE
Journal :
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society
Accession number :
edsair.doi...........90d7a5a9bd1dbe7942f26193897f829b
Full Text :
https://doi.org/10.1109/leos.2002.1159495