High density and high speed SRAM bit-cells and ring oscillators due to laser annealing for 45nm bulk CMOS

MLA

Jean-Damien Chapon, et al. “High Density and High Speed SRAM Bit-Cells and Ring Oscillators Due to Laser Annealing for 45nm Bulk CMOS.” IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, Apr. 2006. EBSCOhost, https://doi.org/10.1109/iedm.2005.1609438.

APA

Jean-Damien Chapon, A. Pouydebasque, S. Vadot, Stephane Denorme, C. Laviron, Scott Warrick, K. Romanjek, D. Delille, H. Bernard, Aomar Halimaoui, Franck Arnaud, Francois Leverd, Romain Gwoziecki, B. Dumont, Tomasz Skotnicki, I. Pouilloux, C. Chaton, Pascal Gouraud, M. Bidaud, … Nicolas Planes. (2006). High density and high speed SRAM bit-cells and ring oscillators due to laser annealing for 45nm bulk CMOS. IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. https://doi.org/10.1109/iedm.2005.1609438

Chicago

Jean-Damien Chapon, A. Pouydebasque, S. Vadot, Stephane Denorme, C. Laviron, Scott Warrick, K. Romanjek, et al. 2006. “High Density and High Speed SRAM Bit-Cells and Ring Oscillators Due to Laser Annealing for 45nm Bulk CMOS.” IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, April. doi:10.1109/iedm.2005.1609438.