Cite
Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl2 + Ar inductively coupled plasma with various HBr/Cl2 mixing ratios
MLA
Alexander Efremov, et al. “Kinetics and Mechanisms for Ion-Assisted Etching of InP Thin Films in HBr + Cl2 + Ar Inductively Coupled Plasma with Various HBr/Cl2 Mixing Ratios.” Thin Solid Films, vol. 660, Aug. 2018, pp. 590–95. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........908c6df79f39b84bb0ab809315cbd1f7&authtype=sso&custid=ns315887.
APA
Alexander Efremov, Il Ki Han, Kwang-Ho Kwon, Changmok Kim, Jaemin Lee, & Young Hwan Kim. (2018). Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl2 + Ar inductively coupled plasma with various HBr/Cl2 mixing ratios. Thin Solid Films, 660, 590–595.
Chicago
Alexander Efremov, Il Ki Han, Kwang-Ho Kwon, Changmok Kim, Jaemin Lee, and Young Hwan Kim. 2018. “Kinetics and Mechanisms for Ion-Assisted Etching of InP Thin Films in HBr + Cl2 + Ar Inductively Coupled Plasma with Various HBr/Cl2 Mixing Ratios.” Thin Solid Films 660 (August): 590–95. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........908c6df79f39b84bb0ab809315cbd1f7&authtype=sso&custid=ns315887.