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Application of a statistical compact model for Random Telegraph Noise to scaled-SRAM Vmin analysis
- Source :
- 2010 Symposium on VLSI Technology.
- Publication Year :
- 2010
- Publisher :
- IEEE, 2010.
-
Abstract
- A statistical compact RTN (Random Telegraph Noise) model with a fixed V th shift and V gs dependent trap time constants is proposed. It accurately reproduces the experimental observation of larger V th fluctuation at higher |V gs |. The model is also applied to analysis of SRAM V min fluctuation and finds out the distribution follows a log-normal statistics.
Details
- Database :
- OpenAIRE
- Journal :
- 2010 Symposium on VLSI Technology
- Accession number :
- edsair.doi...........906175019e7b2d649410ee12b55f568c