Back to Search Start Over

Application of a statistical compact model for Random Telegraph Noise to scaled-SRAM Vmin analysis

Authors :
Takeshi Okagaki
Kenichiro Sonoda
Yuuichi Hirano
O. Tsuchiya
Katsumi Eikyu
Y. Inoue
Motoaki Tanizawa
Shigeki Ohbayashi
K. Ishikawa
Source :
2010 Symposium on VLSI Technology.
Publication Year :
2010
Publisher :
IEEE, 2010.

Abstract

A statistical compact RTN (Random Telegraph Noise) model with a fixed V th shift and V gs dependent trap time constants is proposed. It accurately reproduces the experimental observation of larger V th fluctuation at higher |V gs |. The model is also applied to analysis of SRAM V min fluctuation and finds out the distribution follows a log-normal statistics.

Details

Database :
OpenAIRE
Journal :
2010 Symposium on VLSI Technology
Accession number :
edsair.doi...........906175019e7b2d649410ee12b55f568c