Transport Properties of Kesterite Thin Films of Cu2ZnSnS4 Obtained by Spray Pyrolysis

28th European Photovoltaic Solar Energy Conference and Exhibition; 2449-2452
Thin Cu2ZnSnS4 films have been deposited by spray pyrolysis method in argon and ambient atmosphere, followed by annealing to improve the film quality. Temperature dependence of the resistivity,, is investigated before and after the annealing in the interval of T between ~ 10 – 300 K. The as-deposited films, as well as those annealed at low temperature, exhibit the Mott variable-range hopping (VRH) conduction. Analysis of the experimental (T) data has yielded microscopic relevant parameters of the layers. Annealing at highest temperatures determines domination of the inter-grain (IG) conductivity over the Mott VRH conduction mechanism. The grain sizes, estimated with the analysis of the IG conduction, are in a reasonable agreement with those obtained by scanning electron microscopy investigations.