SEU study of 4T, 6T, 7T, 8T, 10T MOSFET based SRAM using TCAD simulation

Authors :: N. Vinodh Kumar
C. Thiruvenkatesan
Nama Prem Sai
Y V Bhuvaneshwari
R. Srinivasan
Source :: International Conference on Information Communication and Embedded Systems (ICICES2014).
Publication Year :: 2014
Publisher :: IEEE, 2014.
Abstract: In this paper radiation performance of 4T, 6T, 7T, 8T and 10T MOSFET based-SRAMs are studied using TCAD simulations. The minimum dose (critical dose) required to flip contents of the cell are extracted, compared and analyzed. The simulation results show that 10T SRAM shows better radiation performance whereas 4T-SRAM shows worst radiation performance.

Subjects :: Random access memory
Hardware_MEMORYSTRUCTURES
business.industry
Computer science
Topology (electrical circuits)
Hardware_PERFORMANCEANDRELIABILITY
Radiation
Embedded system
MOSFET
Electronic engineering
Critical dose
Static random-access memory
business
Technology CAD

Database :: OpenAIRE
Journal :: International Conference on Information Communication and Embedded Systems (ICICES2014)
Accession number :: edsair.doi...........902fe27079abb17263a48601de13ef2e
Full Text :: https://doi.org/10.1109/icices.2014.7034119