Deembedded techniques for microstrip bends, T-and cross-junctions in CMOS technology

This work presents new deembedded techniques for microstrip discontinuities, including bends, T-junctions, and cross junctions. Since the test structures of discontinuity devices include probe pads and interconnects, the deembedded techniques need extra test structures to remove the unwanted effects. Only two line structures are added to simply remove probe pad parasitics and to calculate the required interconnect effects. The discontinuity test structures are rebuilt by measured data and equivalent circuit models. Then, the components in the models can be extracted. Designed test structures are fabricated using standard 40-nm CMOS technology. The modeling results of discontinuity effects are obtained in lumped components from 10 MHz to 67 GHz.