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Rapid laser‐induced growth of nitride and oxide layers at a beryllium/liquid interface

Authors :
T. Venkatesan
Siu-Wai Chan
D. Dijkkamp
X. D. Wu
Source :
Journal of Applied Physics. 62:293-295
Publication Year :
1987
Publisher :
AIP Publishing, 1987.

Abstract

Excimer laser irradiation was used to induce rapid formation of nitride and oxide layers on beryllium samples immersed in liquid nitrogen and water, respectively. The elemental composition of the irradiated surfaces was determined by means of Rutherford backscattering spectrometry. Compound formation of Be3N2 and BeO was confirmed by x‐ray diffraction. The results show that extensive reaction occurred only if the laser energy was sufficient to melt the beryllium surface. The amount of incorporated nitrogen or oxygen atoms was initially proportional to the laser energy density and to the number of laser shots. Saturation occurred when a near stoichiometric layer of Be3N2 or BeO was formed at the surface. The rate of compound formation was extremely high, on the order of 10–100 nm per shot.

Details

ISSN :
10897550 and 00218979
Volume :
62
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........8fee0e9af302668dbcc5a4cb2e9eb179
Full Text :
https://doi.org/10.1063/1.339143