An image method application to multilayer spreading resistance analysis

A numerical program to obtain the impurity profile within a semiconductor material from the measured spreading resistance data was developed. In the program, an image method was applied to calculate the spreading resistance of the multilayered structure, which consisted of a stack of layers, each of homogeneous resistivity, with thicknesses equal to the spacing of the spreading resistance data. The solution adopted in the present program is described in this paper. Converting results from the spreading resistance data to the impurity profile of an implanted and diffused sample and buried channel are also shown.