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An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's
- Source :
- IEEE Electron Device Letters. 13:554-556
- Publication Year :
- 1992
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1992.
-
Abstract
- A multicurrent contour, average-energy-based, substrate current model for silicon submicrometer NMOSFETs is presented as a significant improvement to the local-field model that is commonly used in modern drift-diffusion device simulators. The model is implemented as a post-processor by applying a one-dimensional energy conservation equation to many current contours in order to generate a two-dimensional representation of average energy and impact ionization rate which is integrated to calculate the substrate current. Comparisons of simulations and experimental I-V curves for both simple and LDD MOSFETs are presented. Outstanding agreement has been obtained over a wide range of bias conditions and channel lengths. >
- Subjects :
- Energy conservation
Impact ionization
Materials science
MOSFET
Electronic engineering
Field-effect transistor
Substrate (electronics)
Electrical and Electronic Engineering
Electric current
Current (fluid)
Energy (signal processing)
Electronic, Optical and Magnetic Materials
Computational physics
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 13
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........8f6b6bfc7eacf3bfb5d73d8f2cbbd2f0
- Full Text :
- https://doi.org/10.1109/55.192837