Local Crystal Orientation in Laser Annealed Silicon Using a Raman Microprobe

In this paper, we discuss the application of polarization selective Raman microprobe spectroscopy to the detailed, non-destructive analysis of the local crystal orientation of a polysilicon sample grown over SiO 2 pads and laser annealed. Intensity measurements taken as a function of input polarization angle are fit to an expression derived from the Raman scattering selection rules to calculate the angles by which the crystal structure is twisted within the original substrate plane, as well as the degree of tipping of the crystal plane away from the plane of the Si substrate. The results give some indication as to the direction of seeding during recrystallization.