Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices

A bipolar-type one diode–one resistor (1D1R) memory device is proposed and demonstrated by integrating a Ni/TiO 2 /Ti diode and an Al/Strontium Titanate Nickelate (STN)/Pt bipolar resistive random access memory cell to suppress undesired sneak current in a cross-point array. Uniform self-compliance resistive-switching characteristics can be achieved by reverse bias current of the Ni/TiO 2 /Ti diode. Experimental results show that the bipolar 1D1R memory device has reproducible, uniform, and self-rectifying resistive-switching behavior in low-resistance state. High current ON/OFF ratio (>10 5 ) and satisfactory retention (>>10 5 s) are achieved. Therefore, the proposed device exhibits high potential for high-density integrated nonvolatile memory applications.