Deep levels in n-InP

Seven electron traps and two hole traps have been detected on various n-InP samples of high-quality Au/InP Schottky barrier and p + n junction structures by using DLTS technique. We propose that electron trap ME 1 (E C -0.69eV) observed for the first time is related to impurity iron, and the commonly detectable electron trap ME 2 (E C -0.62eV) is probably caused by native defect or residual impurity other than iron.