Ternary organic photomultiplier detector based on double-doped C70:C60 trap

In order to obtain the organic photodetector with high photomultiplier efficiency by using the method of electron trap assisted hole injection, it is proposed that a ternary organic photomultiplier detector with C70:C60 double electron traps doped in the P3HT:PTB7:PC61BM photoactive layer in this paper. Under the conditions of −2 V, λ = 460 nm and Pin = 0.21 mW·cm−2, the R, D* and EQE of the device are 7.28 A·W−1, 9.55 × 1012Jones and 1691.65% when the doping concentration of C70:C60 is 2.5 wt%:1.5 wt%, which these are 4.67, 4.85 and 4.66 times by compared with C70 single-doped (2.5 wt%). In addition, the electron trap concentration Nq of the C70:C60 double-doped device reaches 1.10 × 1018 cm−3, which is an order of magnitude higher than the C70 single-doped device(Nq = 4.38 × 1017 cm−3). As a consequence, the C70:C60 double-doped can effectively increase the trap doping concentration in the photoactive layer, thus improving the external quantum efficiency and photomultiplier of the device. This paper provides a new idea for high concentration trap doping of organic active layer.