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Formation of cellular defect structure on GaSb ion-implanted at low temperature

Authors :
Yoshihiko Hayashi
Toshimasa Yoshiie
Noriko Nitta
Masafumi Taniwaki
Source :
Journal of Applied Physics. 92:1799-1802
Publication Year :
2002
Publisher :
AIP Publishing, 2002.

Abstract

Formation of the anomalous cellular structure in (100) GaSb with Sn ion-implantation at a low temperature is investigated by cross-sectional scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. A fine structure consisting of many cells was formed on GaSb surface implanted by 60 keV Sn. The cell diameter and the thickness of the walls partitioning the cells were about 50 and 10 nm, respectively, which are almost constant in the range of the ion dose 4.0×1014–8.9×1014 ions/cm2. The depth of the cells increased linearly with increasing ion dose, from 100 nm in the sample implanted with a dose of 4.0×1014 ions/cm2 to 220 nm in that implanted with a dose of 8.9×1014 ions/cm2. From the experimental results, it is concluded that the development of the cellular structure originates in formation of the voids. An improved defect formation mechanism based on movement of the implantation-induced point defects is discussed.

Details

ISSN :
10897550 and 00218979
Volume :
92
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........8e81cbca77a4a0c5ba160767d8e92fd8
Full Text :
https://doi.org/10.1063/1.1493662